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| VISHAY SL02 to SL04 Vishay Semiconductors Small Surface Mount Schottky Diodes \ Features * * * * * For surface mounted applications Low-profile package Ideal for automated placement Low power loss, high efficiency High temperature soldering: 260 C/10 seconds at terminals 17249 Mechanical Data Case: JEDEC DO-219-AB (SMF) Plastic case Polarity: Color band denotes cathode end Weight: approx. 0.01g Packaging codes-options: G1-10 K per 13 " reel (8 mm tape), 50 K/box G2-3 K per 7 " reel (8 mm tape), 30 K/box Parts Table Part SL02 SL03 SL04 Type differentiation Single Diodes Single Diodes Single Diodes S2 S3 S4 Marking SMF SMF SMF Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Maximum repetitive peak reverse voltage Test condition Part SL02 SL03 SL04 Maximum RMS voltage SL02 SL03 SL04 Maximum DC blocking voltage SL02 SL03 SL04 Maximum average forward rectified current Peak forward surge current 8.3 ms single half sine-wave Ttp = 109 C Symbol VRRM VRRM VRRM VRMS VRMS VRMS VDC VDC VDC IF(AV) IFSM Value 20 30 40 14 21 28 20 30 40 1.1 40 Unit V V V V V V V V V A A Document Number 85687 Rev. 3, 21-Feb-03 www.vishay.com 1 SL02 to SL04 Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air2) Maximum operating junction temperature Storage temperature range 2)Mounted VISHAY Symbol RJA TJ TSTG Value 180 125 - 55 to 150 Unit K/W C C on epoxy substrate with 3 x 3mm Cu pads ( 40 m thick) Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Instaneous forward voltage at 0.5 1) Test condition Part SL02 SL03 SL04 Symbol VF VF VF VF VF VF IR IR IR IR IR IR Typ. 0.360 0.395 0.450 0.420 0.450 0.530 Max 0.385 0.43 0.51 Unit V V V V V V Typical instantaneous forward voltage 1.1 A 1.1 A 1.1 A SL02 SL03 SL04 SL02 SL02 SL03 SL03 SL04 SL04 Maximum DC reverse current at rated DC blocking voltage TA = 25 C TA = 100 C TA = 25 C TA = 100 C TA = 25 C TA = 100 C 250 8.0 130 6.0 20 6.0 A mA A mA A mA 1) Pulse test: 300 s pulse width, 1 % duty cycle Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.5 250 Junction Capacitance (pF) Average Forward Current (A) 200 1.0 150 100 0.5 SL02 50 SL04 0 10 0 10 30 50 70 90 110 130 150 17380 0 2 4 6 8 10 12 17379 Lead temperature (C) Reverse Voltage (V) Figure 1. Forward Current Derating Curve Figure 2. Typical Junction Capacitance www.vishay.com 2 Document Number 85687 Rev. 3, 21-Feb-03 VISHAY SL02 to SL04 Vishay Semiconductors Instantaneous Forward Current (A) 10 10000 TJ = 100C 1 Instantaneous Reverse Current ( A) TJ = 100C TJ = 75C 100 1000 TJ = 75C 0.1 TJ = 50C TJ = 50C 0.01 10 TJ = 25C TJ = 25C 0.001 Pulse Width = 300s 1% Duty Cycle 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0.0001 17381 0.1 0 17384 5 10 15 20 25 30 35 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characterisics - SL02 Figure 6. Typical Reverse Current Characteristics - SL03 10000 Instantaneous Reverse Current (A) TJ = 100C 1000 TJ = 75C TJ = 50C 100 TJ = 25C 10 1 0 5 10 15 20 25 17382 Reverse Voltage (V) Figure 4. Typical Reverse Current Characteristics - SL02 Instantaneous Forward Current (A) 10 1 TJ = 100C TJ = 75C 0.1 TJ = 50C 0.01 TJ = 25C 0.001 Pulse Width = 300s 1% Duty Cycle 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 17383 Instantaneous Forward Voltage (V) Figure 5. Typical Instantaneous Forward Characteristics - SL03 Document Number 85687 Rev. 3, 21-Feb-03 www.vishay.com 3 SL02 to SL04 Vishay Semiconductors Package Dimensions in mm Cathode Band T op View VISHAY 1.8 0.1 1.0 0.2 5 0.98 0.1 2.8 0.1 0.05 - 0.30 5 Detail Z enlarged Z 0.60 0.25 0.00 - 0.10 3.7 0.2 17247 Mounting Pad Layout 1.6 1.2 1.2 17248 www.vishay.com 4 Document Number 85687 Rev. 3, 21-Feb-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. SL02 to SL04 Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85687 Rev. 3, 21-Feb-03 www.vishay.com 5 |
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